PART |
Description |
Maker |
DP500 |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
DP100 |
Extremely low collector-to-emitter saturation voltage PNP Silicon Transistor
|
KODENSHI KOREA CORP. AUK corp
|
DN500P |
Extremely low collector-to-emitter saturation voltage NPN Silicon Transistor
|
KODENSHI KOREA CORP. AUK corp
|
DN500 |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
2SC5212 |
Small Signal Transistor Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
PMF370XN |
N-channel mTrenchMOS extremely low level FET N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
|
Usha India Ltd.
|
STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|